Metal oxide TFT with improved carrier mobility
US7812346B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2008 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | May 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A fabrication method is used in conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick and the upper major surface and the lower major surface have material in abutting engagement to form underlying interfaces and overlying interfaces. The method of fabrication includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces to adjust the carrier density in the adjacent metal oxide by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement. The method also includes one or both steps of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.