Thin-film transistor and display device
US7812348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2009 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Feb 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
Abstract
A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.