Nonvolatile semiconductor memory device and method of fabricating the same
US7812391B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2009 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Apr 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/66
Abstract
A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.