Light emitting devices with an electrically active top reflector contact
US7812421B2 · kind B2 · utility
1Cited by
1References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2007 |
| Grant date | Oct 12, 2010 |
| Priority date | — |
| Expiry date | Jun 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to one described embodiment, a light emitting device structure includes an epitaxial contact layer disposed on an active region of the light emitting device structure, a multi-layer reflector disposed at least partially on the epitaxial contact layer, and conductive contacts abutting the epitaxial contact layer, the multi-layer reflector enclosing the conductive contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.