Patent · US Active

Distributed feedback laser having enhanced etch stop features

US7813395B1 · kind B1 · utility

1Cited by
2References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 12, 2008
Grant dateOct 12, 2010
Priority date
Expiry dateFeb 13, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/34306
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In one example embodiment, a DFB laser includes a substrate, an active region positioned above the substrate, and a grating layer positioned above the active region. The grating layer includes a portion that serves as a primary etch stop layer. The DFB laser also includes a secondary etch stop layer located either above or below the grating layer, and a spacer layer interposed between the grating layer and the active region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.