Patent · US Active

Deposition tool cleaning process having a moving plasma zone

US7815738B2 · kind B2 · utility

0Cited by
6References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 25, 2006
Grant dateOct 19, 2010
Priority date
Expiry dateDec 6, 2028

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/905
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

The present invention provides, in one embodiment, a process for cleaning a deposition chamber (100). The process includes a step (100) of forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber having an interior surface and in a presence of a plasma. The process (100) further includes a step (120) of ramping a flow rate of said gaseous fluorocompound to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface. Other embodiments advantageously incorporate the process (100) into a system (200) for cleaning a deposition chamber (205) and a method of manufacturing semiconductor devices (300).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.