Method for fabricating pixel structure
US7816159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2008 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Jan 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/481
Abstract
A method for fabricating a pixel structure includes following steps. First, a substrate is provided. Next, a first conductive layer is formed on the substrate. Next, a first shadow mask is disposed over the first conductive layer. Next, a laser is applied through the first shadow mask to irradiate the first conductive layer to form a gate. Next, a gate dielectric layer is formed on the substrate to cover the gate. After that, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer over the gate, wherein the gate, the channel layer, the source and the drain together form a thin film transistor. A patterned passivation layer is formed on the thin film transistor and the patterned passivation layer exposes a part of the drain. Furthermore, a pixel electrode electrically connecting to the drain is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.