Organic thin-film transistor and fabrication method thereof and organic thin-film device
US7816172B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Feb 17, 2005 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Feb 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
An organic thin-film transistor having a higher carrier-mobility, a method of fabricating the organic thin-film transistor and an organic thin-film device including the organic thin-film transistor are provided. In an organic thin-film transistor having an organic semiconductor layer, the organic semiconductor layer contains a fluorinated acene compound which is represented by a formula of C4n+2F2n+4, wherein n is an integer of 2 or greater. The fluorinated acene compound is preferably tetradecafluoropentacene or dodecafluoronaphthacene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.