Nano-elastic memory device and method of manufacturing the same
US7816175B2 · kind B2 · utility
6Cited by
12References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2008 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Apr 16, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/842
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.