Multi-step epitaxial process for depositing Si/SiGe
US7816217B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2005 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Jun 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes providing a substrate comprising silicon, cleaning the substrate, performing a first low pressure chemical vapor deposition (LPCVD) process using a first source gas to selectively deposit a seeding layer of silicon (Si) over the substrate, performing a second LPCVD process using a second source gas to selectively deposit a first layer of silicon germanium (SiGe) over the layer of Si, the second source gas including hydrochloride at a first flow rate, and performing a third LPCVD process using a third source gas including hydrochloride at a second flow rate. The first flow rate is substantially lower than the second flow rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.