Methods of forming a semiconductor device including a diffusion barrier film
US7816255B2 · kind B2 · utility
3Cited by
4References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 30, 2008 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | May 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased, and the diffusion barrier film may have distinguished barrier characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.