Plasma deposition apparatus and method for making polycrystalline silicon
US7816269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2007 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Jun 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.