Patent · US Active

Capacitive gas sensor and method of fabricating the same

US7816681B2 · kind B2 · utility

5Cited by
4References
18Claims
0Family size

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Key dates

Filing dateJul 14, 2009
Grant dateOct 19, 2010
Priority date
Expiry dateJul 14, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/921
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.