Light-emitting diode device and manufacturing method thereof

US7816703B2 · kind B2 · utility

Assignee

• Delta Electronics, Inc. · TW

Inventors

• Chao-Min Chen · Fujian, CN
• Shih-Peng Chen · Daxi District, TW
• Ching-Chuan Shiue · Daxi District, TW
• Huang-Kun Chen · Daxi District, TW

Key dates

• Filing date: Nov 12, 2008
• Grant date: Oct 19, 2010
• Expiry date: Dec 14, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/814

Abstract

A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.