Patent · US Active

Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive

US7816721B2 · kind B2 · utility

214Cited by
6References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 9, 2005
Grant dateOct 19, 2010
Priority date
Expiry dateMar 28, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/0214
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.