Nonvolatile memories with laterally recessed charge-trapping dielectric

US7816726B2 · kind B2 · utility

Assignee

• ProMOS Technologies PTE. Ltd. · SG

Inventors

• Yue-Song He · San Jose, US
• Len Mei · Hsinchu, TW

Key dates

• Filing date: Dec 20, 2007
• Grant date: Oct 19, 2010
• Expiry date: Sep 18, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

Charge-trapping dielectric (160) in a nonvolatile memory cell is recessed from under the control gate's edge and/or from an edge of a substrate isolation region. The recessed geometry serves to reduce or eliminate charge trapping in regions from which the charge may be difficult to erase.