Optical sensor
US7816751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2008 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Jan 5, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.