Apparatus for controlling substrate voltage of semiconductor device
US7816936B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 11, 2010 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Mar 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit apparatus includes an internal circuit having a MIS transistors on a semiconductor substrate and a substrate voltage control block that supplies a substrate voltage to the internal circuit and controls threshold voltages for the MIS transistors of the internal circuit. The apparatus also includes a leakage current detection MIS transistor and a leakage current detection circuit. The substrate voltage control block generates a substrate voltage based on comparison results of the comparator and applies the generated substrate voltage to the substrate of the leakage current detection MIS transistor and the substrate of the MIS transistors of the internal circuit. The substrate voltage control block includes a switch arranged between first and second input terminals of a comparator and a drain of the leakage current detection MIS transistor and a reference potential terminal, as well as an input data corrector that carries out substrate voltage adjustment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.