High SMSR unidirectional etched lasers and low back-reflection photonic device
US7817702B2 · kind B2 · utility
3Cited by
20References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2004 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | Sep 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Unidirectionality of lasers is enhanced by forming one or more etched gaps (78, 80) in the laser cavity. The gaps may be provided in any segment of a laser, such as any leg of a ring laser, or in one leg (62) of a V-shaped laser (60). A Brewster angle facet at the distal end of a photonic device coupled to the laser reduces back-reflection into the laser cavity. A distributed Bragg reflector is used at the output of a laser to enhance the side-mode suppression ratio of the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.