Substrate patterning by electron emission-induced displacement
US7818816B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2008 |
| Grant date | Oct 19, 2010 |
| Priority date | — |
| Expiry date | May 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed are methods and devices for patterning micro- and/or nano-sized pattern elements on a substrate using field emitted electrons from an element. Disclosed methods and devices can also be utilized to form nano- and micron-sized depressions in a substrate according to a more economical process than as has been utilized in the past. Methods include single-step methods by which structures can be simultaneously created and located at desired locations on a substrate. Methods include the application of a bias voltage between a probe tip and a substrate held at a relatively close gap distance. The applied voltage can promote current flow between the probe and the substrate via field emissions. During a voltage pulse, and within predetermined energy levels and tip-to-surface gap distances, three dimensional formations can be developed on the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.