Sputter ion pump
US7819633B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 28, 2006 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Feb 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J41/20
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
A sputter ion pump includes one vacuum chamber, two parallel anode poles and one cold cathode electron emitter. The vacuum chamber includes at least one aperture located in an outer wall thereof. The two parallel anode poles are positioned in the vacuum chamber and arranged in a symmetrical configuration about a center axis of the vacuum chamber. The cold cathode electron emission device is located on or proximate the outer wall of the vacuum chamber and faces a corresponding aperture. The cold cathode electron emission device is thus configured for injecting electrons through the corresponding aperture and into the vacuum chamber. The sputter ion pump produces a saddle-shaped electrostatic field and is free of a magnetic field. The sputter ion pump has a simplified structure and a low power consumption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.