Ferroelectric recording medium and writing method for the same
US7820311B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2006 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Oct 22, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/947
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.