Patent · US Active

Semiconductor device with vertical electron injection and its manufacturing method

US7820461B2 · kind B2 · utility

1Cited by

11References

18Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Robert Baptist · Échirolles, FR
Fabrice Letertre · Grenoble, FR

Key dates

Filing date	Nov 20, 2006
Grant date	Oct 26, 2010
Priority date	—
Expiry date	May 18, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/32341
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method for making a semiconductor device with vertical electron injection, including: transferring a monocrystalline thin film onto a first face of a support substrate; producing at least one electronic component from the monocrystalline thin film; forming at least one recess in a second face of the substrate to enable electric or electronic access to the electronic component through the monocrystalline thin film; and producing a vertical electron injector configured to inject electrons into the electronic component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.