Photoelectric conversion element and process for fabricating the same, electronic apparatus and process for fabricating the same, and semiconductor layer and process for forming the same
US7820471B2 · kind B2 · utility
2Cited by
14References
14Claims
0Family size
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Key dates
| Filing date | Dec 26, 2003 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Jul 28, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A paste in which semiconductor fine grain such as titanium oxide fine grain or the like and a binder made of a polymer compound are mixed is coated onto a transparent conductive substrate and sintered, thereby forming a semiconductor layer made of the semiconductor fine grain, after that, ultraviolet rays are irradiated to the semiconductor layer and, by using a photocatalyst effect of the semiconductor fine grain, an organic substance remaining in the semiconductor layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.