Forming of the periphery of a schottky diode with MOS trenches
US7820494B2 · kind B2 · utility
0Cited by
6References
41Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2007 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Jan 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/649
Abstract
A method for forming a component of TMBS type having its periphery formed of a trench with insulated walls filled with a conductor, including the steps of depositing on a semiconductor substrate a thick layer of a first insulating material and a thin layer of a second material; simultaneously digging a peripheral trench and the trenches of the component; isotropically etching the first material so that a cap overhanging a recess remains; forming a thin insulating layer; and filling the trenches and said recess with a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.