Methods for simultaneously forming doped regions having different conductivity-determining type element profiles
US7820532B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2008 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Dec 29, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.