Process for forming low defect density heterojunctions

US7820541B2 · kind B2 · utility

Assignee

• Teledyne Licensing, LLC · US

Inventors

• Gerard J. Sullivan · Newbury Park, US
• Amal Ikhlassi · Thousand Oaks, US
• Joshua I. Bergman · Thousand Oaks, US
• Berinder Brar · Newbury Park, US
• Gabor Nagy · Redmond, US

Key dates

• Filing date: Sep 14, 2006
• Grant date: Oct 26, 2010
• Expiry date: Nov 22, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/01
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a low defect density heterojunction between a first and a second compound, the first and second compounds each includes a group III element combined with a group V element in the periodic table, the method includes the steps of introducing in the deposition chamber the flux of the group III element for the first compound at substantially the same time while introducing in the deposition chamber a flux of the group V element for the second compound, stopping the flux of the group III element for the first compound after a first predetermined time period, stopping the flux of the group V element for the first compound after a second predetermined time period, and introducing in the deposition chamber a flux of the group III element the group V element for the second compound.