Negative tone double patterning method
US7820550B2 · kind B2 · utility
10Cited by
1References
22Claims
0Family size
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Key dates
| Filing date | Sep 5, 2008 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Sep 5, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a pattern on a wafer is provided. The method includes applying a photoresist on the wafer and exposing the wafer to define a first pattern on the photoresist. The method also includes exposing the wafer to define a second pattern on the photoresist, wherein each of the first and second patterns comprises unexposed portions of the photoresist and developing the wafer to form the first and second patterns on the photoresist, wherein the first and second patterns are formed by removing the unexposed portions of the photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.