Patent · US Active

Fabrication of thermal microphotonic sensors and sensor arrays

US7820970B1 · kind B1 · utility

25Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 25, 2009
Grant dateOct 26, 2010
Priority date
Expiry dateJun 25, 2029

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N21/7746
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A thermal microphotonic sensor is fabricated on a silicon substrate by etching an opening and a trench into the substrate, and then filling in the opening and trench with silicon oxide which can be deposited or formed by thermally oxidizing a portion of the silicon substrate surrounding the opening and trench. The silicon oxide forms a support post for an optical resonator which is subsequently formed from a layer of silicon nitride, and also forms a base for an optical waveguide formed from the silicon nitride layer. Part of the silicon substrate can be selectively etched away to elevate the waveguide and resonator. The thermal microphotonic sensor, which is useful to detect infrared radiation via a change in the evanescent coupling of light between the waveguide and resonator, can be formed as a single device or as an array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.