Photodetector with dark current reduction
US7820971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2008 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Jan 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/107
Abstract
A detector of incident infrared radiation has a first region with a first spectral response, and a second region with a second, different spectral response. The second absorption region is stacked on the first and may be separated therefrom by a region in which the chemical composition of the compound semiconductor is graded. Separate contacts are provided to the first and second absorption regions and a further common contact is provided so as to permit the application of either a bias voltage or a skimming voltage across the respective pn junctions. The detector may be operated such that a preselected one of the absorption regions responds to incident infrared radiation of a predetermined waveband while the other absorption region acts as a skimmer of dark current, thereby enhancing the signal to noise ratio of the detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.