Electronic arrangement including a thin film transistor having active and protective layers structured in a same two-dimensional pattern
US7820999B2 · kind B2 · utility
2Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2004 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Feb 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
Abstract
The device of the invention comprises a thin film transistor of an organic semiconductor material. This semiconductor material is patterned by applying first a protective layer and thereafter a photoresist. As a result hereof, the transistor of the invention (A) shows a very low leakage current and a low threshold voltage in comparison with prior art transistors (B,C).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.