Low temperature fabrication of conductive micro structures
US7821010B2 · kind B2 · utility
3Cited by
11References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2006 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Jun 9, 2028 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0721
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a micro structure includes depositing amorphous silicon over a substrate having an electric circuit at a temperature below 550° C. to form a first structure portion, wherein at least part of the first structure portion is configured to receive an electrical signal from the electric circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.