Silicon carbide semiconductor device
US7821013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2006 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Aug 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.