Power semiconductor component with trench-type field ring structure
US7821028B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 22, 2008 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Jan 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
Abstract
A power semiconductor component and a method for producing such a component. The component comprises a semiconductor base body having a first doping. A pn junction is formed in the base body by a contact region having a second doping with a first doping profile. A field ring structure has a second doping with a second doping profile. The contact region and the field ring structure are arranged at respectively assigned first and second partial areas of a first surface of the base body. Both extend into the base body, wherein the base body has, for the field ring structure, a trench-type cutout assigned to each respective field ring, the surface of said cutout following the contour of the assigned doping profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.