Nonvolatile semiconductor memory device and method of manufacturing the same
US7821056B2 · kind B2 · utility
1Cited by
3References
16Claims
0Family size
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Key dates
| Filing date | Sep 20, 2007 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | May 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device includes an array of nonvolatile memory cell transistors, each of which is configured such that a tunnel insulation film, a floating gate electrode, a floating gate insulation film and a control gate electrode are stacked on a surface of a semiconductor substrate. A mean roughness of an interface between a polysilicon, of which the floating gate electrode is formed, and the floating gate insulation film is 1.5 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.