Semiconductor device including trench gate transistor and method of forming the same
US7821060B2 · kind B2 · utility
1Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2008 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | Jul 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an active region having a groove, a gate insulating film, and a gate electrode. The gate electrode may include first and second layers. The first layer extends along the gate insulating film. The first layer is electrically conductive. The second layer extends along the first layer. The second layer is separate from the gate insulating film by the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.