Reprogrammable nonvolatile memory devices and methods
US7821837B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2009 |
| Grant date | Oct 26, 2010 |
| Priority date | — |
| Expiry date | May 15, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device includes a command decoder configured to generate a read/write flag signal in response to a read/write command and to generate a reprogram flag signal in response to a reprogram command, and a read/write circuit configured to control reading and writing operations in a memory cell array. The device further includes a read/write controller configured to cause the read/write circuit to perform a reading/writing operation in response to the read/write flag signal provided from the command decoder, and a reprogram controller configured to cause the read/write controller to perform a reprogramming operation in response to the reprogram flag signal. Methods of reprogramming a memory device include determining whether the memory device is in a busy state, delaying a reprogramming operation if the memory device is in a busy state, and executing the reprogramming operation when the memory device has turned to a standby state from the busy state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.