Electrochemical device

US7824537B2 · kind B2 · utility

Assignee

• Gen-X Power Corp · CK

Inventors

• Paul Andrew Christensen · Rothbury, GB
• Nicholas Wright · Saint Joseph, US
• Terrence Arthur Egerton · Stockton-on-Tees, GB

Key dates

• Filing date: Sep 2, 2005
• Grant date: Nov 2, 2010
• Expiry date: Mar 1, 2028

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C02F2001/46142
• WIPO field: Environmental technology
• WIPO sector: Chemistry

Abstract

An electrochemical device including: (a) a semiconductor layer, wherein the semiconductor is silicon or silicon carbide, and where the layer has a thickness from 1 to 1000 μm; (b) a TiO2 layer on the semiconductor layer, where the layer may include an alkaline earth oxide MO up to an amount where the layer is MtiO3, and where the layer has a thickness from 5 nm to 1 mm; (c) a grid of inert metal on the TiO2 layer, arranged so as to be able to apply a electric field across the TiO2 layer; and (d) an ohmic contact on the semiconductor layer.