Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US7824579B2 · kind B2 · utility
1Cited by
14References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2006 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Sep 7, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention is directed to a thick film conductor composition comprised of (a) aluminum-containing powder; (b) one or more glass frit compositions; dispersed in (c) organic medium wherein at least one of said glass frit compositions has a softening point of less than 400° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.