Method for producing semiconductor device
US7824957B2 · kind B2 · utility
14Cited by
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15Claims
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Assignee
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Key dates
| Filing date | May 29, 2009 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | May 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
During a process of forming an active layer of a semiconductor device using a ZnO film, the ZnO film is laser-annealed with an ultraviolet pulsed laser to reduce the resistance of the film, and then oxidation treatment is applied to increase the specific resistance value at a channel portion of the ZnO film, which once has excessively low resistance after the laser annealing, to 103Ω·cm or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.