Method for manufacturing nitride semiconductor device
US7825012B2 · kind B2 · utility
1Cited by
6References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 13, 2009 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Jul 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a nitride semiconductor device, includes forming a p-type nitride semiconductor layer on a substrate, from an organic metal compound as a group III element source material, ammonia and a hydrazine derivative as group V element source materials, and a Mg source material gas as a p-type impurity source material. The flow velocity of the source material gases including the group III element source material, the group V element source materials, and the p-type impurity source material is more than 0.2 m/sec.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.