Patent · US Active

Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit

US7825013B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Matthias Goldbach · Dresden, DE
Dietmar Henke · Radebeul, DE
Sven Schmidbauer · Dresden, DE

Key dates

Filing date	May 19, 2008
Grant date	Nov 2, 2010
Priority date	—
Expiry date	Dec 6, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/256
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the amorphous portion. According to another embodiment, an integrated circuit comprises a doped semiconductor portion including a region having a non-stoichiometric composition and a contact structure comprising a conductive material. The contact structure is in contact with the region having a non-stoichiometric composition.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.