Method of synthesizing silicon wires
US7825036B2 · kind B2 · utility
8Cited by
2References
4Claims
0Family size
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Key dates
| Filing date | Sep 22, 2006 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Dec 20, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/769
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of synthesizing silicon wires generally includes the steps of: providing a substrate; forming a copper catalyst particle layer on a top surface of the substrate; heating the reactive device at a temperature of above 450° C. in a flowing protective gas; and introducing a mixture of a protective gas and a silicon-based reactive gas at a temperature of above 450° C. at a pressure of below 700 Torr, thereby forming the silicon wires on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.