Tunable photonic crystal
US7825380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2009 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Feb 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/21
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow hand of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.