Semiconductor device, display device, and method of manufacturing semiconductor device
US7825515B2 · kind B2 · utility
2Cited by
0References
10Claims
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Key dates
| Filing date | Sep 8, 2008 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Sep 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.