Mesh structure and field-emission electron source apparatus using the same
US7825591B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2007 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Apr 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J31/123
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.