Reduced duty cycle distortion using controlled body device
US7825693B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Aug 31, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K5/1565
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor chip comprising a reference circuit and a target circuit. The reference circuit comprises a first P-channel field effect transistor (PFET) and a first N-channel field effect transistor (NFET). A reference voltage is connected to gates of the first PFET and first NFET. A body control voltage node is formed by connecting a drain of the first PFET, a body of the first PFET, a drain of the first NFET and a body of the first NFET. A target circuit comprises a second PFET and a second NFET. The body control voltage node is connected to a body of the second PFET and the second NFET. The body control voltage improves duty cycle in the target circuit compared to a similarly designed circuit having PFET bodies connected to Vdd and NFET bodies connected to Ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.