Magneto-resistive effect device of the CPP structure and magnetic disk system
US7826179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2007 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Jun 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/325
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention provides a magneto-resistive effect device of the CPP (current perpendicular to plane) structure, comprising a magneto-resistive effect unit, and an upper shield layer and a lower shield layer located with that magneto-resistive effect unit sandwiched between them, with a sense current applied in a stacking direction, wherein the magneto-resistive effect unit comprises a nonmagnetic metal intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with that nonmagnetic metal intermediate layer sandwiched between them, wherein the first ferromagnetic layer and said second ferromagnetic layer are exchange coupled via the nonmagnetic metal intermediate layer such that where there is no bias magnetic field applied as yet, their magnetizations are anti-parallel with each other, and at least one of the upper shield layer and the lower shield layer has an inclined magnetization structure with its magnetization inclining with respect to a track width direction, so that by the magnetization of that inclined magnetization structure, a bias magnetic field can be applied to the first ferromagnetic layer and the second ferromagnetic laye…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.