Reading circuit and method in a data-storage system
US7826246B2 · kind B2 · utility
1Cited by
1References
25Claims
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Assignee
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Key dates
| Filing date | Jan 14, 2008 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Oct 12, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reading circuit for reading a datum stored in a storage material. In the reading circuit, a generating stage generates a read electrical quantity to be applied to the storage material, and a sensing stage is configured to generate an output electrical quantity that is indicative of a charge variation associated to the datum stored, and that occurs in the storage material due to application of the read electrical quantity; in particular, the sensing stage uses a charge-sensing amplifier electrically connected to the storage material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.