Crossbar diode-switched magnetoresistive random access memory system
US7826258B2 · kind B2 · utility
18Cited by
17References
38Claims
0Family size
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Key dates
| Filing date | Mar 24, 2008 |
| Grant date | Nov 2, 2010 |
| Priority date | — |
| Expiry date | Jan 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory or MRAM memory system comprising an M×N crossbar array of MRAM cells. Each memory cell stores binary data bits with switchable magnetoresistive tunnel junctions (MJT) where the electrical conductance changes as the magnetic moment of one electrode (the storage layer) in the MJT switches direction. The switching of the magnetic moment is assisted by a phase transition interlayer that transitions from antiferromagnetic to ferromagnetic at a well defined, above ambient temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.